TK1R4S04PB,LXHQ
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757-TK1R4S04PB,LXHQ
TK1R4S04PB,LXHQ
Fabricante:
Descripción:
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 180W 1MHz Automotive; AEC-Q101
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 180W 1MHz Automotive; AEC-Q101
Hoja de datos:
En existencias: 26,116
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Existencias:
-
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Precio (PEN)
| Cantidad | Precio unitario |
Precio ext.
|
|---|---|---|
| S/10.47 | S/10.47 | |
| S/6.77 | S/67.70 | |
| S/4.67 | S/467.00 | |
| S/3.75 | S/1,875.00 | |
| S/3.65 | S/3,650.00 | |
| Envase tipo carrete completo (pedir en múltiplos de 2000) | ||
| S/3.10 | S/6,200.00 | |
| 24,000 | Presupuesto | |
Hoja de datos
Application Notes
- Basics of Operational Amplifiers and Comparators
- Designing of Low Power Op Amps for Dust Sensor
- Impacts of the dv/dt Rate on MOSFETs
- Low-Noise CMOS Operational Amplifider Ideal for Sensor Signal Amplification
- MOSFET Avalanche Ruggedness
- MOSFET Gate Driver Circuit
- MOSFET Parallening (Parasitic Oscillation Between Parallel Power MOSFETs)
- Parasitic Oscillation and Ringing of Power MOSFETs
- Power MOSFET Electrical Characteristics
- Power MOSFET Maximum Ratings
- Power MOSFET Selecting MOSFETs and Consideration for Circuit Design
- Power MOSFET Structure and Characteristics
- Power MOSFET Thermal Design and Attachment of a Thermal Fin
- Signal Gain and Noise Gain of the Op-Amp
Models
Product Catalogs
Test/Quality Data
- CNHTS:
- 8541290000
- USHTS:
- 8541290065
- TARIC:
- 8541290000
- ECCN:
- EAR99
Toshiba Electronic Devices & Storage Corporation Automotive products
may be used as engineering samples, however; they are not intended for
volume automotive production or reliability testing without prior
approval by Toshiba Semiconductor and Storage.
Please contact a Mouser Technical Sales Representative for
further assistance.
5-0320-2