TJ30S06M3L,LXHQ
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757-TJ30S06M3L,LXHQ
TJ30S06M3L,LXHQ
Fabricante:
Descripción:
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 68W 1MHz Automotive; AEC-Q101
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 68W 1MHz Automotive; AEC-Q101
Hoja de datos:
En existencias: 3,702
-
Existencias:
-
3,702 Se puede enviar inmediatamenteSe ha producido un error inesperado. Vuelva a intentarlo más tarde.
-
Plazo de entrega de fábrica:
-
4 Semanas Tiempo estimado de producción de fábrica para cantidades superiores a las que se muestran.
Precio (PEN)
| Cantidad | Precio unitario |
Precio ext.
|
|---|---|---|
| S/6.15 | S/6.15 | |
| S/4.13 | S/41.30 | |
| S/2.88 | S/288.00 | |
| S/2.27 | S/1,135.00 | |
| S/2.08 | S/2,080.00 | |
| Envase tipo carrete completo (pedir en múltiplos de 2000) | ||
| S/1.85 | S/3,700.00 | |
| S/1.68 | S/6,720.00 | |
Hoja de datos
Application Notes
- Impacts of the dv/dt Rate on MOSFETs
- Impacts of the dv/dt Rate on MOSFETs
- MOSFET Avalanche Ruggedness
- MOSFET Avalanche Ruggedness
- MOSFET Gate Driver Circuit
- MOSFET Gate Driver Circuit
- MOSFET Parallening (Parasitic Oscillation Between Parallel Power MOSFETs)
- MOSFET Parallening (Parasitic Oscillation Between Parallel Power MOSFETs)
- Parasitic Oscillation and Ringing of Power MOSFETs
- Parasitic Oscillation and Ringing of Power MOSFETs
- Power MOSFET Electrical Characteristics
- Power MOSFET Electrical Characteristics
- Power MOSFET Maximum Ratings
- Power MOSFET Maximum Ratings
- Power MOSFET Selecting MOSFETs and Consideration for Circuit Design
- Power MOSFET Selecting MOSFETs and Consideration for Circuit Design
- Power MOSFET Structure and Characteristics
- Power MOSFET Structure and Characteristics
- Power MOSFET Thermal Design and Attachment of a Thermal Fin
- Power MOSFET Thermal Design and Attachment of a Thermal Fin
Models
Product Catalogs
Test/Quality Data
- CNHTS:
- 8541290000
- USHTS:
- 8541290065
- TARIC:
- 8541290000
- ECCN:
- EAR99
Toshiba Electronic Devices & Storage Corporation Automotive products
may be used as engineering samples, however; they are not intended for
volume automotive production or reliability testing without prior
approval by Toshiba Semiconductor and Storage.
Please contact a Mouser Technical Sales Representative for
further assistance.
5-0320-2