TJ200F04M3L,LXHQ
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Fabricante:
Descripción:
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 375W 1MHz Automotive; AEC-Q101
En existencias: 46,406
-
Existencias:
-
46,406 Se puede enviar inmediatamenteSe ha producido un error inesperado. Vuelva a intentarlo más tarde.
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Plazo de entrega de fábrica:
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1 semana Tiempo estimado de producción de fábrica para cantidades superiores a las que se muestran.
Precio (PEN)
| Cantidad | Precio unitario |
Precio ext.
|
|---|---|---|
| Cinta cortada / MouseReel™ | ||
| S/16.15 | S/16.15 | |
| S/10.63 | S/106.30 | |
| S/7.51 | S/751.00 | |
| S/6.81 | S/3,405.00 | |
| Envase tipo carrete completo (pedir en múltiplos de 1000) | ||
| S/5.53 | S/5,530.00 | |
| 25,000 | Presupuesto | |
Hoja de datos
Application Notes
- Impacts of the dv/dt Rate on MOSFETs
- MOSFET Avalanche Ruggedness
- MOSFET Gate Driver Circuit
- MOSFET Parallening (Parasitic Oscillation Between Parallel Power MOSFETs)
- Parasitic Oscillation and Ringing of Power MOSFETs
- Power MOSFET Electrical Characteristics
- Power MOSFET Maximum Ratings
- Power MOSFET Selecting MOSFETs and Consideration for Circuit Design
- Power MOSFET Structure and Characteristics
- Power MOSFET Thermal Design and Attachment of a Thermal Fin
Models
Product Catalogs
- CNHTS:
- 8541290000
- USHTS:
- 8541290065
- TARIC:
- 8541290000
- ECCN:
- EAR99
Perú

Toshiba Electronic Devices & Storage Corporation Automotive products
may be used as engineering samples, however; they are not intended for
volume automotive production or reliability testing without prior
approval by Toshiba Semiconductor and Storage.
Please contact a Mouser Technical Sales Representative for
further assistance.
5-0320-2