LF2101NTR

IXYS
747-LF2101NTR
LF2101NTR

Fabricante:

Descripción:
Controladores de puertas HI LO Side DRVR 130mA SOIC(N)-8

Modelo ECAD:
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Disponibilidad

Existencias:
10,000 Se puede enviar en 20 días
Mínimo: 1   Múltiples: 1
Precio unitario:
S/-.--
Precio ext.:
S/-.--
Est. Tarifa:
Empaque:
Envase tipo carrete completo (pedir en múltiplos de 2500)

Precio (PEN)

Cantidad Precio unitario
Precio ext.
Cinta cortada / MouseReel™
S/7.86 S/7.86
S/5.02 S/50.20
S/4.48 S/112.00
S/3.71 S/371.00
S/3.23 S/807.50
S/3.06 S/1,530.00
S/2.57 S/2,570.00
Envase tipo carrete completo (pedir en múltiplos de 2500)
S/2.35 S/5,875.00
S/2.28 S/17,100.00
† S/23.00 Se agregará y calculará la tarifa de MouseReel™ en su carrito de compras. Ningún artículo de MouseReel™ se puede cancelar ni devolver.

Atributo del producto Valor de atributo Seleccionar atributo
IXYS
Categoría de producto: Controladores de puertas
RoHS:  
Driver ICs - Various
High-Side, Low-Side
SMD/SMT
SOIC-8
2 Driver
2 Output
10 V
20 V
70 ns
35 ns
- 40 C
+ 125 C
Reel
Cut Tape
MouseReel
Marca: IXYS
Tipo lógico: CMOS, TTL
Tiempo de retardo de apagado máximo: 220 ns
Tiempo de retardo de encendido máximo: 220 ns
Sensibles a la humedad: Yes
Corriente de suministro operativa: 150 uA
Dp - Disipación de potencia : 625 mW
Tipo de producto: Gate Drivers
Retraso de propagación - Máx.: 50 ns
Cantidad de empaque de fábrica: 2500
Subcategoría: PMIC - Power Management ICs
Tecnología: Si
Productos encontrados:
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Atributos seleccionados: 0

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CNHTS:
8542399000
USHTS:
8542390090
TARIC:
8542399000
ECCN:
EAR99

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High-Side & Low-Side Gate Driver ICs

IXYS High-Side and Low-Side Gate Driver ICs offer 600mA/290mA to 4.5A/4.5A sink/source output current capabilities. The devices feature a wide operating voltage range of 10V to 20V. Protections include undervoltage lockout (UVLO) and shoot-through. IXYS High-Side and Low-Side Gate Driver ICs operate in a -40°C to +125°C temperature range and are available in SOIC-8, -14, -16 industry-standard packages and pin-outs.

Gate Drivers for N-Channel MOSFETs & IGBTs

IXYS Gate Drivers for N-Channel MOSFETs and IGBTs include high-voltage high-speed gate drivers and three-phase gate driver ICs. These devices are designed to drive two N-channel MOSFETs or IGBTs in a half-bridge configuration or high-side / low-side configuration. The high-voltage technology enables the high side to switch to 600V in a bootstrap operation. The drivers provide feature high pulse current buffers designed for minimum driver cross conduction. Other features include logic inputs with 3.3V capability, Schmitt triggered logic inputs, and undervoltage lockout (UVLO) protection. IXYS Gate Drivers for N-Channel MOSFETs and IGBTs operate over an extended temperature range of -40°C to +125°C.