NCD5700DR2G

onsemi
863-NCD5700DR2G
NCD5700DR2G

Fabricante:

Descripción:
Controladores de puertas HIGH CURRENT IGBT GATE DR

Modelo ECAD:
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En existencias: 2,576

Existencias:
2,576 Se puede enviar inmediatamente
Plazo de entrega de fábrica:
24 Semanas Tiempo estimado de producción de fábrica para cantidades superiores a las que se muestran.
Mínimo: 1   Múltiples: 1
Precio unitario:
S/-.--
Precio ext.:
S/-.--
Est. Tarifa:
Empaque:
Envase tipo carrete completo (pedir en múltiplos de 2500)

Precio (PEN)

Cantidad Precio unitario
Precio ext.
Cinta cortada / MouseReel™
S/13.78 S/13.78
S/10.35 S/103.50
S/9.54 S/238.50
S/8.56 S/856.00
S/7.79 S/1,947.50
S/7.43 S/3,715.00
S/7.20 S/7,200.00
Envase tipo carrete completo (pedir en múltiplos de 2500)
S/7.05 S/17,625.00
S/7.01 S/35,050.00
† S/23.00 Se agregará y calculará la tarifa de MouseReel™ en su carrito de compras. Ningún artículo de MouseReel™ se puede cancelar ni devolver.

Atributo del producto Valor de atributo Seleccionar atributo
onsemi
Categoría de producto: Controladores de puertas
RoHS:  
IGBT, MOSFET Gate Drivers
SMD/SMT
SOIC-16
1 Driver
1 Output
7.8 A
0 V
5 V
Inverting, Non-Inverting
18 ns
19 ns
- 40 C
+ 125 C
NCD5700
Reel
Cut Tape
MouseReel
Marca: onsemi
Características: DESAT Protection, Tight UVLO Thresholds
Tiempo de retardo de apagado máximo: 63 ns
Tiempo de retardo de encendido máximo: 56 ns
Corriente de suministro operativa: 900 uA
Voltaje de salida: 800 mV, 14.1 V
Dp - Disipación de potencia : 900 mW
Tipo de producto: Gate Drivers
Apagado: Shutdown
Cantidad de empaque de fábrica: 2500
Subcategoría: PMIC - Power Management ICs
Tecnología: Si
Productos encontrados:
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Atributos seleccionados: 0

CNHTS:
8542399000
CAHTS:
8542310000
USHTS:
8542390090
MXHTS:
8542310302
ECCN:
EAR99

Solutions for Energy Infrastructure

onsemi Solutions for Energy Infrastructure address the landscape for energy generation, distribution, and storage that is rapidly evolving to fulfill targets set by government policy and increasing consumption. Heightened efficiency targets, reductions of CO2 emissions, and a focus on renewable and clean energy are key factors in this Energy Infrastructure Evolution. onsemi offers a comprehensive portfolio of energy efficient solutions to serve the demanding needs of high-power applications including Silicon Carbide (SiC) Diodes, Intelligent Power Modules, and Current Sense Amplifiers.

Pairing Gate Drivers with EliteSiC MOSFETs

Energy Infrastructure applications like EV charging, energy storage, Uninterruptible Power Systems (UPS), and solar are pushing system power levels to hundreds of kilowatts and even megawatts. These high-power applications employ half bridge, full bridge, and 3-phase topologies duty cycling up to six switches for inverters and BLDC. Depending on the power level and switching speeds, system designers look to various switch technologies, including silicon, IGBTs, and SiC, to best fit application requirements.

NCD5700 and NCD5701 IGBT Gate Drivers

onsemi NCD5700 and NCD5701 Insulated-Gate Bipolar Transistor (IGBT) Gate Drivers are high-current, high-performance devices for high power applications, such as solar inverters, motor control, and Uninterruptable Power Supplies (UPSs). These Gate Drivers are highly-integrated, offering a cost-effective solution by eliminating many external components. Device protection features of the NCD5700 and NCD5701 Gate Drivers include accurate Under-Voltage Lockout (UVLO), Desaturation Protection (DESAT), and Active Low FAULT output.