FFSH40120ADN-F155

onsemi
512-FFSH40120ADNF155
FFSH40120ADN-F155

Fabricante:

Descripción:
Diodos Schottky de SiC 1200V SiC SBD 40A

Hoja de datos:
Modelo ECAD:
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En existencias: 125

Existencias:
125 Se puede enviar inmediatamente
Plazo de entrega de fábrica:
11 Semanas Tiempo estimado de producción de fábrica para cantidades superiores a las que se muestran.
Mínimo: 1   Múltiples: 1
Precio unitario:
S/-.--
Precio ext.:
S/-.--
Est. Tarifa:

Precio (PEN)

Cantidad Precio unitario
Precio ext.
S/63.45 S/63.45
S/48.46 S/484.60
S/43.25 S/4,325.00
S/43.17 S/19,426.50
10,350 Presupuesto

Atributo del producto Valor de atributo Seleccionar atributo
onsemi
Categoría de producto: Diodos Schottky de SiC
RoHS:  
REACH - SVHC:
Through Hole
TO-247-3
Dual Anode Common Cathode
40 A
1.2 kV
1.45 V
135 A
200 uA
- 55 C
+ 175 C
FFSH40120ADN
Tube
Marca: onsemi
Dp - Disipación de potencia : 220 W
Tipo de producto: SiC Schottky Diodes
Cantidad de empaque de fábrica: 450
Subcategoría: Diodes & Rectifiers
Nombre comercial: EliteSiC
Vr - Tensión inversa: 1.2 kV
Alias de las piezas n.º: FFSH40120ADN_F155
Peso de la unidad: 6.390 g
Productos encontrados:
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Atributos seleccionados: 0

CNHTS:
8541100000
CAHTS:
8541100090
USHTS:
8541100080
JPHTS:
854110090
KRHTS:
8541109000
TARIC:
8541100000
MXHTS:
8541100101
ECCN:
EAR99

FFSH SiC Schottky Diodes

onsemi FFSH Silicon Carbide (SiC) Schottky Diodes provide improved system efficiency and have a max junction temperature of +175°C. These onsemi Schottky Diodes have no switching loss and a high surge current capacity. FFSH diodes use Silicon Carbide semiconductor material for higher operating frequency, increasing power density and reduction of system size/cost. This ensures high reliability and robust operation during surge or over-voltage conditions.

1200V EliteSiC (Silicon Carbide) Schottky Diodes

onsemi 1200V EliteSiC (Silicon Carbide) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. These SiC Schottky diodes feature no reverse recovery current, temperature-independent switching, and excellent thermal performance. The system benefits include high efficiency, fast operating frequency, high power density, low EMI, and reduced system size and cost.

Wide Bandgap EliteSiC (Silicon Carbide) Devices

onsemi Wide Bandgap EliteSiC (Silicon Carbide) Devices provide superior switching performance and higher reliability compared to silicon. The system benefits include high efficiency, fast operating frequency, increased power density, reduced EMI, and reduced system size and cost. The EliteSiC portfolio includes 650V, 1200V, and 1700V diodes, 650V and 1200V IGBT and SiC diode Power Integrated Modules (PIMs), 1200V MOSFETs and SiC MOSFET drivers, and AEC-Q100 qualified devices.

Silicon Carbide Schottky Diodes

onsemi Silicon Carbide (SiC) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. SiC Schottky Diodes feature no reverse recovery current, temperature-independent switching, and excellent thermal performance. System benefits include high efficiency, fast operating frequency, high power density, low EMI, and reduced system size and cost.  onsemi offers 650V and 1200V devices in a range of current and package options, ideal for next-generation power system designs.

D1 EliteSiC Diodes

onsemi D1 EliteSiC Diodes is a high-performance and versatile solution designed for modern power electronics applications. The onsemi D1 features voltage ratings of 650V, 1200V, and 1700V. These diodes offer the flexibility to meet various design requirements. Featuring different packages, such as D2PAK2, D2PAK3, TO-220-2, TO-247-2, and TO-247-3, the D1 EliteSiC Diodes provide designers with options to optimize board space and thermal performance.

Energy Storage Solutions

onsemi Energy Storage Systems (ESS) store electricity from various power sources, like coal, nuclear, wind, and solar, in different forms, including batteries (electrochemical), compressed air (mechanical), and molten salt (thermal). This solution focuses on battery energy storage systems connected to solar inverter systems.

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