CSD17505Q5A

Texas Instruments
595-CSD17505Q5A
CSD17505Q5A

Fabricante:

Descripción:
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 30V NCh NexFET Power MOSFET A 595-CSD175 A 595-CSD17581Q5A

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Disponibilidad

Existencias:
No en existencias
Plazo de entrega de fábrica:
12 Semanas Tiempo estimado de producción de fábrica.
Mínimo: 2500   Múltiples: 2500
Precio unitario:
S/-.--
Precio ext.:
S/-.--
Est. Tarifa:

Precio (PEN)

Cantidad Precio unitario
Precio ext.
Envase tipo carrete completo (pedir en múltiplos de 2500)
S/2.98 S/7,450.00

Producto similar

Texas Instruments CSD17581Q5A
Texas Instruments
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 30-V N channel NexF ET power MOSFET si A A 595-CSD17581Q5AT

Atributo del producto Valor de atributo Seleccionar atributo
Texas Instruments
Categoría de producto: Transistor metal-óxido-semiconductor de efecto de campo (MOSFET)
RoHS:  
REACH - SVHC:
Si
SMD/SMT
VSONP-8
N-Channel
1 Channel
30 V
100 A
4.6 mOhms
- 20 V, 20 V
1.3 V
10 nC
- 55 C
+ 150 C
3.2 W
Enhancement
NexFET
Reel
Marca: Texas Instruments
Configuración: Single
País de ensamblaje: Not Available
País de difusión: Not Available
País de origen: CN
Tiempo de caída: 6.1 ns
Tipo de producto: MOSFETs
Tiempo de subida: 11.5 ns
Serie: CSD17505Q5A
Cantidad de empaque de fábrica: 2500
Subcategoría: Transistors
Tipo de transistor: 1 N-Channel
Peso de la unidad: 330 mg
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Atributos seleccionados: 0

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CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8542399000
MXHTS:
8542399901
ECCN:
EAR99

NexFET™ Power MOSFETs

Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

NexFET N-Channel Power MOSFETs

Texas Instruments NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra-low Qg and Qd and low thermal resistance. The Texas Instruments NexFET N-Channel Power MOSFETs are avalanche rated and come in a SON 5mm x 6mm plastic package.

CSD17505Q5A 30V, NexFET™ Power MOSFET

Texas Instruments CSD17505Q5A 30V, N-Channel NexFET™ Power MOSFET is designed to minimize losses in power conversion applications. TI CSD17505Q5A N-Channel NexFET Power MOSFET features ultralow gate charge total (4.5V) of 10nC (typical) and ultralow gate charge gate to drain of 2.7nC (typical). TI CSD17505Q5A NexFET Power MOSFET offers low thermal resistance and are optimized for control and synchronous FET applications. They are also ideal for point-of-load synchronous buck in networking, telecom, and computing systems.
Learn More

Texas Instruments NexFET™ Power MOSFET

The Texas Instruments N-Channel NexFETPower MOSFET series features low on resistance coupled with extremely low gate charge, making it ideal for high efficiency/high frequency switching converter and Synchronous FET applications. The TI NexFET Power MOSFET combines vertical current flow with a lateral power MOSFET for a level of performance not previously possible with existing silicon platforms. The TI NexFET minimizes losses in power conversion applications and allows designers to achieve 90-percent power supply efficiencies from light to full loads with high output currents and low duty cycles.