STW78N65M5

STMicroelectronics
511-STW78N65M5
STW78N65M5

Fabricante:

Descripción:
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650 V 0.033 Ohm 69 A MDmesh(TM)

Modelo ECAD:
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En existencias: 23

Existencias:
23
Se puede enviar inmediatamente
En pedido:
267
Se espera el 26/03/2026
Plazo de entrega de fábrica:
18
Semanas Tiempo estimado de producción de fábrica para cantidades superiores a las que se muestran.
Mínimo: 1   Múltiples: 1
Precio unitario:
S/-.--
Precio ext.:
S/-.--
Est. Tarifa:

Precio (PEN)

Cantidad Precio unitario
Precio ext.
S/55.51 S/55.51
S/36.78 S/367.80
S/31.68 S/3,168.00

Atributo del producto Valor de atributo Seleccionar atributo
STMicroelectronics
Categoría de producto: Transistor metal-óxido-semiconductor de efecto de campo (MOSFET)
RoHS:  
Si
Through Hole
TO-247-3
N-Channel
1 Channel
650 V
69 A
24 mOhms
- 25 V, 25 V
4 V
203 nC
- 55 C
+ 150 C
450 W
Enhancement
AEC-Q100
MDmesh
Tube
Marca: STMicroelectronics
Configuración: Single
País de ensamblaje: Not Available
País de difusión: Not Available
País de origen: CN
Tiempo de caída: 14 ns
Tipo de producto: MOSFETs
Tiempo de subida: 14 ns
Serie: Mdmesh M5
Cantidad de empaque de fábrica: 600
Subcategoría: Transistors
Tipo de transistor: 1 N-Channel
Peso de la unidad: 6 g
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Atributos seleccionados: 0

CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99

Automotive MDmesh V Power MOSFET

STMicroelectronics Automotive MDmesh™ V Power MOSFET is the industry’s first 650V AEC-Q101 automotive-qualified MOSFETs in the popular TO-247 package. The 650V rating provides a greater safety margin when exposed to high-voltage spikes, enhancing the reliability of automotive power and control modules. This device offers extremely low on-resistance (RDS(on)) as low as 0.032Ω, combined with the compact TO-247 outline, enhances system energy efficiency and power density. Gate charge (Qg) and input capacitance are also low, resulting in an outstanding Qg x RDS(on) figure of merit (FOM) with high switching performance and efficiency.

Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low RDS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.

N-channel MDmesh V Power MOSFET

STMicroelectronics 550 and 650V MDmesh M5 series of super-junction Power MOSFETs offer outstanding RDS(on) values to significantly reduce losses in line-voltage PFC circuits and power supplies. This in turn enables new generations of electronic products to offer greater energy savings, superior power density, and more compact applications. This new technology will help product designers tackle emerging challenges such as the high-efficiency targets of new eco-design directives, and will also benefit the renewable energy sector by saving vital watts normally lost in power-control modules.