IR21834STRPBF
Ver especificaciones del producto
Fabricante:
Descripción:
Controladores de puertas Hlf Brdg Drvr Sft Trn On Lw Sd Invrt
En existencias: 6,133
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Existencias:
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6,133 Se puede enviar inmediatamenteSe ha producido un error inesperado. Vuelva a intentarlo más tarde.
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Plazo de entrega de fábrica:
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24 Semanas Tiempo estimado de producción de fábrica para cantidades superiores a las que se muestran.
Precio (PEN)
| Cantidad | Precio unitario |
Precio ext.
|
|---|---|---|
| Cinta cortada / MouseReel™ | ||
| S/9.58 | S/9.58 | |
| S/7.12 | S/71.20 | |
| S/6.50 | S/162.50 | |
| S/5.84 | S/584.00 | |
| S/5.53 | S/1,382.50 | |
| S/5.33 | S/2,665.00 | |
| S/5.10 | S/5,100.00 | |
| Envase tipo carrete completo (pedir en múltiplos de 2500) | ||
| S/4.44 | S/11,100.00 | |
Embalaje alternativo
Hoja de datos
Application Notes
- Gate Drive Characteristics and Requirements for HEXFET® power MOSFETs (PDF)
- HV Floating MOS Gate Drivers (PDF)
- IRS218(1,14) and IR218(1,14) Comparison (PDF)
- IRS218(3,34) and IR218(3,34) Comparison (PDF)
- Understanding HVIC Datasheet Specifications (PDF)
- Use Gate Charge to Design the Gate Drive Circuit for Power MOSFETs and IGBTs (PDF)
Models
Product Catalogs
Technical Resources
- Design Tip - Using Monolithic High Voltage Gate Drivers (PDF)
- High Current Buffer for Control IC's (PDF)
- Low Gate Charge HEXFETS simplify Gate Drive and Lower Cost (PDF)
- Managing Transients in Control IC Driven Power Stages (PDF)
- PWM Control Methods Increases Efficiency and Reliability; Extends Battery Charge-cycle Time (PDF)
- Using Control ICs to Generate Neg. Gate Bias for MOSFETs & IGBTs (PDF)
- CNHTS:
- 8542399000
- CAHTS:
- 8542390000
- USHTS:
- 8542310075
- KRHTS:
- 8542311000
- TARIC:
- 8542319000
- MXHTS:
- 8542310302
- ECCN:
- EAR99
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