1EDI60I12AF

Infineon Technologies
726-1EDI60I12AF
1EDI60I12AF

Fabricante:

Descripción:
Controladores de puertas 1200V Isolated 1-CH, 9.4A, SEP Output

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En existencias: 3,480

Existencias:
3,480 Se puede enviar inmediatamente
Plazo de entrega de fábrica:
52 Semanas Tiempo estimado de producción de fábrica para cantidades superiores a las que se muestran.
Las cantidades superiores a 3480 estarán sujetas a requisitos mínimos de pedido.
Mínimo: 1   Múltiples: 1
Precio unitario:
S/-.--
Precio ext.:
S/-.--
Est. Tarifa:

Precio (PEN)

Cantidad Precio unitario
Precio ext.
S/11.44 S/11.44
S/7.43 S/74.30
S/6.73 S/168.25
S/5.68 S/568.00
S/5.33 S/1,332.50
S/4.67 S/2,335.00
S/4.16 S/4,160.00
Envase tipo carrete completo (pedir en múltiplos de 2500)
S/3.53 S/8,825.00

Embalaje alternativo

N.º de artículo del Fabricante:
1EDI60I12AFXUMA1
Embalaje:
Reel, Cut Tape
Disponibilidad:
En existencias
Precio:
S/7.24
Mín.:
1

Atributo del producto Valor de atributo Seleccionar atributo
Infineon
Categoría de producto: Controladores de puertas
RoHS:  
IGBT, MOSFET Gate Drivers
High-Side
SMD/SMT
DSO-8
1 Driver
1 Output
6 A
3.1 V
17 V
Inverting, Non-Inverting
10 ns
9 ns
- 40 C
+ 150 C
1ED Compact
Reel
Cut Tape
Marca: Infineon Technologies
País de ensamblaje: Not Available
País de difusión: Not Available
País de origen: DE
Tipo lógico: CMOS
Tiempo de retardo de apagado máximo: 330 ns
Tiempo de retardo de encendido máximo: 330 ns
Sensibles a la humedad: Yes
Dp - Disipación de potencia : 400 mW
Tipo de producto: Gate Drivers
Retraso de propagación - Máx.: 330 ns
Apagado: Shutdown
Cantidad de empaque de fábrica: 2500
Subcategoría: PMIC - Power Management ICs
Tecnología: Si
Nombre comercial: EiceDRIVER
Alias de las piezas n.º: SP001037208 1EDI60I12AFXUMA1
Peso de la unidad: 83 mg
Productos encontrados:
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Atributos seleccionados: 0

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CNHTS:
8542399000
USHTS:
8542310075
ECCN:
EAR99

EiceDRIVER™ Gate Driver ICs

Infineon EiceDRIVER™ Gate Driver ICs are designed for MOSFETs, IGBTs, SiC MOSFETs, and GaN HEMTs devices. EiceDRIVER™ gate drivers provide a wide range of typical output current options, from 0.1A up to 10A. These devices have robust gate drive protection features such as fast short-circuit protection (DESAT), active Miller clamp, shoot-through protection, fault, shutdown, and over current protection. These features make these driver ICs well-suited for both silicon and wide-bandgap power devices, including CoolGaN™, and CoolSiC™. That’s why Infineon offers more than 500 EiceDRIVER™ gate driver IC solutions suitable for any power switch, and any application.

1-Channel EiceDRIVER™ MOSFET Gate Driver ICs

Infineon Technologies 1-Channel EiceDRIVER™ MOSFET Gate Driver ICs are the crucial link between control ICs, powerful MOSFET, and GaN switching devices. These gate driver ICs enable high system-level efficiencies, excellent power density, and consistent system robustness.

Isolated Gate Drivers

Infineon Isolated Gate Drivers use magnetically coupled coreless transformer (CT) technology to transfer signals across galvanic isolation. These drivers offer functional basic, reinforced isolated, UL 1577, and VDE 0884 certified products. The isolation allows for very large voltage swings (e.g. ±1200V). These isolated drivers incorporate the most important key features and parameters for MOSFET, IGBT, IGBT modules, SiC MOSFET, and GaN HEMT driving.

Infineon Automatic Opening Systems

Infineon Automatic Opening Systems incorporate smart sensors, motor controls, supplies and battery management to automate sliding, swing or garage doors, sun blinds, and gates. When automated, these doors manage opening actions, avoid unintentional opening, control speed and torque, detect objects along paths, as well as perform other functions.

EiceDRIVER™ Isolated & Non-Isolated Gate Drivers

Infineon EiceDRIVER™ Isolated and Non-Isolated Gate Drivers provide optimized low- and high-voltage gate driver solutions for MOSFETs, IGBTs, and IGBT modules. These isolated and non-isolated gate driver ICs are designed to build reliable and efficient applications. An optimum gate drive configuration is essential for all power switches, whether they are in discrete form or in a power module. Infineon gate drivers provide a wide range of typical output current options, from 0.1A up to 10A, suitable for any power device size.

Experience the Difference in Power

Infineon is the leader in the power semiconductor market. With more than 20 years of experience and as the innovator of the revolutionary CoolMOS™ super junction MOSFET technology, Infineon continues pioneering in the power management field. Customers can select based on individual design/system requirements from the industry's broadest silicon-based SJ MOSFET portfolio. As one of the few manufacturers mastering all three main power technologies, Infineon complements this assortment with a groundbreaking wide bandgap (WBG) offering. This offering comprises silicon-carbide-based CoolSiC™ MOSFETs, matching diodes, and gallium-nitride-based CoolGaN™ e-mode HEMTs. Solutions are available, ranging from exceptional price performance through unrivaled robustness to best-in-class devices. This enables customers to build more efficient, environmentally friendly, sustainable applications.

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