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IXTP34N65X2

Name: IXYS IXTP34N65X2
Brand: IXYS
SKU: 747-IXTP34N65X2
Price: 31.1 PEN
Availability: InStock

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Mouser N.º:

747-IXTP34N65X2

Fabricante N.º:

IXTP34N65X2

Fabricante:

IXYS

Descripción:

Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) TO220 650V 34A N-CH X2CLASS

Hoja de datos:

IXTP34N65X2 Hoja de datos

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En existencias: 208

Existencias:: 208 Se puede enviar inmediatamente

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Plazo de entrega de fábrica:: 27 Semanas Tiempo estimado de producción de fábrica para cantidades superiores a las que se muestran.

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Mínimo: 1 Múltiples: 1

Precio unitario:

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Precio ext.:

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Precio (PEN)

Cantidad	Precio unitario	Precio ext.
	S/31.10	S/31.10
	S/16.89	S/168.90
	S/15.49	S/1,549.00
	S/13.31	S/6,655.00

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Atributo del producto	Valor de atributo	Seleccionar atributo
Fabricante:	IXYS
Categoría de producto:	Transistor metal-óxido-semiconductor de efecto de campo (MOSFET)
RoHS:
Tecnología:	Si
Estilo de montaje:	Through Hole
Paquete / Cubierta:	TO-220-3
Polaridad del transistor:	N-Channel
Número de canales:	1 Channel
Vds - Tensión disruptiva entre drenaje y fuente:	650 V
Id - Corriente de drenaje continua:	34 A
Rds On - Resistencia entre drenaje y fuente:	96 mOhms
Vgs - Tensión entre puerta y fuente:	- 30 V, 30 V
Vgs th - Tensión umbral entre puerta y fuente:	3 V
Qg - Carga de puerta:	54 nC
Temperatura de trabajo mínima:	- 55 C
Temperatura de trabajo máxima:	+ 150 C
Dp - Disipación de potencia :	540 W
Modo canal:	Enhancement
Nombre comercial:	HiPerFET
Empaquetado:	Tube
Marca:	IXYS
Configuración:	Single
País de ensamblaje:	Not Available
País de difusión:	Not Available
País de origen:	KR
Tiempo de caída:	30 ns
Transconductancia hacia delante - Mín.:	20 S
Tipo de producto:	MOSFETs
Tiempo de subida:	48 ns
Cantidad de empaque de fábrica:	50
Subcategoría:	Transistors
Tipo de transistor:	1 N-Channel
Tiempo de retardo de apagado típico:	68 ns
Tiempo típico de demora de encendido:	30 ns
Peso de la unidad:	2 g

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CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

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